Continental Device India 2N718A
NPN SILICON PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL VALUE Collector Emitter Voltage VCER 50 Collector Base Voltage VCBO 75 Emitter Base Voltage VEBO 7.0 Power Dissipation @Ta=25ºC PD 500 Derate Above 25ºC 2.86 Power Dissipation @ Tc=25ºC PD 1.8 Derate Above 25ºC 10.3 Operating and Storage Junction Tj, Tstg -65 to +200 Temperature RangeELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage VCER(SUS)* IC=100mA,RBE<10Ω VCBO IC=100µA.IE=0 VEBO IE=100µA, IC=0 ICBO VCB=60V, IE=0 VCB=60V, IE=0 Ta=150ºC IEBO VEB=5V, IC=0 hFE IC=0.1mA