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BAS19 - SILICON PLANAR HIGH SPEED DIODES

General Description

SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms period) IF (AV) Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation

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Datasheet Details

Part number BAS19
Manufacturer CDIL
File Size 125.91 KB
Description SILICON PLANAR HIGH SPEED DIODES
Datasheet download datasheet BAS19 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 12 BAS19, BAS20, BAS21 SOT-23 Formed SMD Package Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms period) IF (AV) Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation *IF IFRM PD Storage Temperature Range Junction Temperature Tstg Tj BAS19 100 120 BAS20 150 200 2.5 0.