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BAS521 Datasheet PDF

Continental Device India BAS521

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BAS521
Datasheet BAS521 Download
Manufacturer
Continental Device India
Description HIGH VOLTAGE SWITCHING DIODE
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BAS521 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Continuous Forward Current Ts < 90 ºC Repetitive Peak Forward Voltage tP = 1ms; δ = 0.25 *IF IFRM Non Repetitive Peak Forward Current tp=1µs, Square wave, Tj=25ºC Prior to Surge IFSM Total Power Dissipation Ts=90ºC *ptot Storage Temperature Tstg Junction Temperature Tj Operating Ambient Temperature Tamb THERMAL RESISTANCE Junction to Solder Point **Rth (j-s) Junction to Ambient in free air Rth (j-a) VALUE 300 300 250 1.0 4.5 500 - 65 to +150 150 - 65 to +150 120 500 UNIT V V mA A A mW oC oC oC K/W K/W *Ts is the temperature at the soldering point of the cathode tab, ** Soldering point of the Cthode tab.

ELECTRICAL CHARACTERISTICS

(Ta=25º C unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION MIN Breakdown Voltage VBR IR=100mA 300 Forward Voltage ***VF IF=100mA Reverse Current IR VR=250V VR=250V, Ta=150ºC Reverse Recovery Time, when Switched from IF=30mA to IR=30mA, RL...
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