Continental Device India BAS85
SILICON PLANAR SCHOTTKY BARRIER DIODE
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Reverse Voltage (Continuous) Forward Current (DC) Average Forward Current Repetitive Peak Forward Current tp <1s; δ <0.5 Non Repetitive Peak Forward Current tp=10ms Storage Temperature Junction Temperature Operating Ambient Temperature THERMAL RESISTANCE Junction to Ambient in free air SYMBOL VR IF IF (Av) IFRM IFSM Tstg Tj Tamb Rth (j-a) VALUE 30 200 200 300 5 - 65 to +150 125 - 65 to +125 320ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Forward Voltage VF IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA Reverse Current IR VR=25V Diode Capacitance Cd VR=1V, f=1MHz MIN BAS85Rev121105E UNIT V mA mA mA A ºC ºC ºC K/W MAX 0.24 0.32 0.40 0.50 0.80 2.3 10 UNIT V V V V V µA pF Continental Device India Limited Data Sheet Page 1 of 3 ø1.42 – 1.50 ø1.35 — 1.45 4.5 3.5 12.9 12.6 63.5 60.5 SOD 80C (LL-34) Mini MELF Hermetically Sealed Glass Package R0.10 0.30 3.30 - 3.70 0.30 Cathode band R 180 OR 330 BAS85 SOD - 80...