FEATURES
- Low forward voltage drop - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are corrosion resistant and leads are readily solderable - Solder hot dip tin (Sn) lead finish MINI MELF MECHANICAL DATA
- Polarity: Indicated by black cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage VRRM 30 Maximum DC Blocking Voltage VR 30 Average Forward Rectified Current IF(AV) 200 Peak Forward Surge Current IFSM 4 Operating Junction Temperature TJ 125 Storage Temperature Range TSTG -65 to +125 PARAMETER SYMBOL Breakdown Voltage IR=10μA BV Reverse Leakage Current VR=25V IR Forward Voltage IF=0.1mA IF=1.0mA IF=10mA VF IF=30mA IF=100mA Reverse Recovery Time (Note 1) trr Junction Capacitance VR=1V, f=1.0MHz CJ Note 1: Reverse recovery test conditions : IF=IR=10mA, RL=100Ω, IRR=1mA MIN 30 TYP 5 MAX 2 0.24 0.32 0.
Taiwan Semiconductor
