ABSOLUTE MAXIMUM RATINGS
at Ta=25ºC (per diode) DESCRIPTION
SYMBOL Reverse Voltage Forward Current VR IF Surge Forward Current t=10ms Average Forward Current (50/60Hz, sinus) Power Dissipation IFSM IF(AV) PD BAT64 Ts < 86ºC BAT64-04, BAT64-06 Ts < 61ºC BAT64-05 Ts < 36ºC Storage Temperature Range Tstg Junction Temperature Tj VALUE 40 250 800 120 250 250 250 - 55 to +150 150 THERMAL RESISTANCE Junction to Soldering Point BAT64 *Rth (j-s) 255 BAT64-04, BAT64-06 355 BAT64-05 455 *Rth (j-s) For calculation of Rth(j-a) please refer to Application Note Thermal Resistance BAT64_06REV081105E Continental Device India Limited Data Sheet UNIT V mA mA mA mW mW mW oC oC K/W K/W K/W Page 1 of 4 SILICON PLANAR SCHOTTKY DIODES BAT64, BAT64-04 BAT64-05, BAT64-06 SOT-23 Formed SMD Package ELECTRICAL CHARACTERISTICS
(Ta=25º C unless specified otherwise) (per diode) DESCRIPTION
SYMBOL TEST CONDITION MIN MAX Reverse Breakdown Voltage Reverse Current Forward Voltage Diode Capacitance Reverse Recovery Time V(BR) IR VF CT trr I(BR)=10µA VR=30V VR=30, Ta=85ºC IF=1mA IF=10mA IF=30mA IF=100mA VR=1V, f=1MHz IF=10mA, IR=10mA, measured IR=1mA, RL=100Ω 40 0.25 0.
Continental Device India
