Datasheet Details
| Part number | BC169C |
|---|---|
| Manufacturer | CDIL |
| File Size | 69.06 KB |
| Description | NPN Silicon Transistor |
| Datasheet | BC169C BC167A Datasheet (PDF) |
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Overview: Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS IS/ISO 9002 Lic# QSC/L- 000019.2 BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BC169C |
|---|---|
| Manufacturer | CDIL |
| File Size | 69.06 KB |
| Description | NPN Silicon Transistor |
| Datasheet | BC169C BC167A Datasheet (PDF) |
|
|
|
SYMBOL Collector -Emitter Voltage VCEO Collector -Emitter Voltage VCES Emitter -Base Voltage VEBO Collector Current Continuous IC Collector Peak Current ICM Base Current IB Power Dissipation @ Ta=25ºC Ptot Storage Junction Tstg Junction Temperature Tj BC167 BC168 BC169 45 20 20 50 30 30 6.0 5 5 100 100 50 200 200 50 50 5 300 -55 to +150 150 THERMAL RESISTANCE Junction to Ambient Rth(j-a) 420 UNITS V V V mA mA mA mW ºC ºC K/W ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector -Emitter Voltage BC167 BVCEO IC=2mA,IB=0 45 BC168, 169 20 Emitter-Base Voltage BC167 BVEBO IE=1µA, IC=0 6 BC168, 169 5 Collector-Cut off Current BC167 ICES VCE=50V,VBE=0 BC168, 169 VCE=30V,VBE=0 Ta =125ºC BC167 VCE=50V,VBE=0 BC168, 169 VCE=30V,VBE=0 TYP MAX UNITS V V V V 15 nA 15 nA 4 µA 4 µA Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN DC Current Gain A hFE IC=0.01mA,VCE=5V B C A IC=2mA,VCE=5V 120 B 180 C 380 BC167A, 168A BC167B, 168B BC168C IC=100mA,VCE=5V Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=0.5mA VCE(Sat)* IC=100mA,IB=5mA** Base Emitter Saturation Voltage VBE(Sat) * IC=10mA,IB=0.5mA VBE(Sat) * IC=100mA,IB=5mA** Base Emitter On Voltage VBE(On) IC=2mA,VCE=5V IC=0.1mA,VCE=5V IC=100mA,VCE=5V** 0.55 TYP MAX UNITS 90 150
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC169 | NPN Silicon Transistor | Micro Electronics |
 |
BC169 | Silicon NPN Transistor | Siemens |
| Part Number | Description |
|---|---|
| BC169B | NPN Silicon Transistor |
| BC167A | NPN Silicon Transistor |
| BC167B | NPN Silicon Transistor |
| BC168A | NPN Silicon Transistor |
| BC168B | NPN Silicon Transistor |
| BC168C | NPN Silicon Transistor |
| BC107 | NPN Transistor |
| BC107A | NPN Transistor |
| BC107B | NPN Transistor |
| BC107C | NPN Transistor |