Continental Device India BC212
PNP Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic PackageELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=2mA,IB=0 BC212 50 BC213, BC214 30 Collector Base Voltage VCBO IC=10µA.IE=0 BC212 60 BC213, BC214 45 Emitter Base Voltage VEB...