Datasheet Details
| Part number | BC212 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 134.27 KB |
| Description | SILICON PNP TRANSISTORS |
| Datasheet | BC212-CentralSemiconductor.pdf |
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Overview: BC212 BC212A BC212B SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i .
| Part number | BC212 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 134.27 KB |
| Description | SILICON PNP TRANSISTORS |
| Datasheet | BC212-CentralSemiconductor.pdf |
|
|
|
: The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications.
TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.60 hFE VCE=5.0V, IC=2.0mA (BC212) 60 hFE VCE=5.0V, IC=2.0mA (BC212A) 100 hFE VCE=5.0V, IC=2.0mA (BC212B) 200 fT VCE=5.0V, IC=10mA, f=100MHz
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC212 | PNP Transistor | CDIL |
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BC212 | Amplifier PNP Transistors | Motorola |
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BC212 | Process 63 PNP Medium Power Transistor | Fairchild |
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BC212 | COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
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BC212 | PNP Plastic Encapsulated Transistor | SeCoS |
| Part Number | Description |
|---|---|
| BC212A | SILICON PNP TRANSISTORS |
| BC212B | SILICON PNP TRANSISTORS |