The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BC212
PNP Silicon Epitaxial Planar Transistor
for general purpose amplifier
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 5 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 2 mA G
BC212 Datasheet
