BC212B Datasheet | Fairchild Semiconductor

PNP General Purpose Amplifier - This device is designed for general purpose amplifier application at collector currents to 100m A. - Sourced from process 68. TO-92 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings- TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 50 60 5 100 - 55 ~ 150 Units V V V m A °C - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations .. Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter IC = 2m A IC = 10µA IE = 10µA VCB = 30V VEB = 4V VCE = 5V, IC = 10µA VCE = 5V, IC = 2m A IC = 100m A, IB = 5m A IC = 100m A, IB = 5m A VCE = 5V, IC = 2m A VCE = 10V, f = 1MHz VCE = 5V, IC = 2m A, f = 1KHz VCE = 5V, IC = 200µA, f = 1KHz RG = 2KΩ, BW = 200Hz 200 0.6 40 60 0.6 1.4 0.72 6 400 10 d B V V V p F Test Condition Min. 50 60 5 15 15 Typ. Max. Units V V V n A n A Off Characteristics Collector-Emitter Breakdown Voltage BVCEO BVCBO BVEBO ICBO IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current On Characteristics- h FE DC Current Gain VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal Characteristics Cob Output Capacitance hfe NF Small Signal Current Gain Noise Figure - Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A, October 2002 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA RθJC Parameter Total Device Dissipation Derate above 25°C Thermal...