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BC212B - SILICON PNP TRANSISTORS

Download the BC212B datasheet PDF. This datasheet also covers the BC212 variant, as both devices belong to the same silicon pnp transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications.

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Note: The manufacturer provides a single datasheet file (BC212-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BC212 BC212A BC212B SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.