BC212B Overview
Key Specifications
Description
The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.0mA VBE(SAT) IC=100mA, IB=5.0mA VBE(ON) VCE=5.0V, IC=2.0mA 0.60 hFE VCE=5.0V, IC=2.0mA (BC212) 60 hFE VCE=5.0V, IC=2.0mA (BC212A) 100 hFE VCE=5.0V, IC=2.0mA (BC212B) 200 fT VCE=5.0V, IC=10mA, f=100MHz.
