BC317 Overview
Description
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCES IC=100µA, VBE=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 Emitter Cut off Current IEBO VEB=4V, IC = 0 Base Emitter On Voltage VBE (on) IC=2mA, VCE=5V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCE (sat) VBE (sat) hFE IC=10mA, VCE=5V IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10µA, VCE=5V BC317A BC317B IC=2mA, VCE=5V BC317 BC317A BC317B MIN 45 50 50 6.0 0.57 40 110 110 200 TYP 0.70 0.85 90 MAX 30 15 0.72 0.77 0.60 450 220 450 BC317_A_B_Rev220103E UNITS V V V mA mW mW/ºC W mW/ºC ºC ºC/W ºC/W UNITS V V V V nA nA V V V V V Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package EBC DYNAMIC CHARACTERISTICS DESCRIPTION Noise Figure Output Capacitance Input Capacitance Transition Frequency Voltage Feedback Ratio Input Impedance Output Admittance Small Signal Current Gain SYMBOL TEST CONDITION MIN IC=200µA, VCE=5V, NF RS=2k.
