Datasheet Details
| Part number | BC317 |
|---|---|
| Manufacturer | CDIL |
| File Size | 105.00 KB |
| Description | NPN Silicon Transistor |
| Datasheet | BC317-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package EBC Amplifier Transistor ABSOLUTE MAXIMUM.
| Part number | BC317 |
|---|---|
| Manufacturer | CDIL |
| File Size | 105.00 KB |
| Description | NPN Silicon Transistor |
| Datasheet | BC317-CDIL.pdf |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 45 50 6.0 150 350 2.8 1.0 8.0 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Rth (j-c) 125 Junction to Ambient in free air Rth (j-a) 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Emitter Voltage VCES IC=100µA, VBE=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=100µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 Emitter Cut off Current IEBO VEB=4V, IC = 0 Base Emitter On Voltage VBE (on) IC=2mA, VCE=5V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCE (sat) VBE (sat) hFE IC=10mA, VCE=5V IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10µA, VCE=5V BC317A BC317B IC=2mA, VCE=5V BC317 BC317A BC317B MIN 45 50 50 6.0 0.57 40 110 110 200 TYP 0.70 0.85 90 MAX 30 15 0.72 0.77 0.60 450 220 450 BC317_A_B_Rev220103E UNITS V V V mA mW mW/ºC W mW/ºC ºC ºC/W ºC/W UNITS V V V V nA nA V V V V V Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package EBC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DYNAMIC CHARACTERISTICS DESCRIPTION Noise Figure Output Capacitance Input Capacitance Transition Frequency Voltage Feedback Ratio Input Impedance Output Admittance Small Signal Current Gain SYMBOL TEST CONDITION MIN IC=200µA, VCE=5V, NF RS=2kΩ, f=1KHz, BW=2
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC317 | NPN TRANSISTOR | Micro Electronics |
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BC317 | AMPLIFIER TRANSISTORS | Motorola |
|
BC317A | AMPLIFIER TRANSISTORS | Motorola |
|
BC317B | AMPLIFIER TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| BC317A | NPN Silicon Transistor |
| BC317B | NPN Silicon Transistor |
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| BC301 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| BC302 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| BC303 | PNP EXPITAXIAL PLANAR SILICON TRANSISTORS |
| BC304 | PNP EXPITAXIAL PLANAR SILICON TRANSISTORS |
| BC307 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC307A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC307B | SILICON PLANAR EPITAXIAL TRANSISTORS |