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BC317B - NPN Silicon Transistor

Download the BC317B datasheet PDF. This datasheet also covers the BC317 variant, as both devices belong to the same npn silicon transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 45 50 6.0 150 350 2.8 1

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC317-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC317B
Manufacturer CDIL
File Size 105.00 KB
Description NPN Silicon Transistor
Datasheet download datasheet BC317B Datasheet

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Other Datasheets by CDIL

Part Number Description
BC317 NPN Silicon Transistor
BC317A NPN Silicon Transistor
BC300 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC301 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC302 (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC317/A/B TO-92 Plastic Package EBC Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 45 50 6.0 150 350 2.8 1.0 8.