Continental Device India BC414B
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC414B |
|---|---|
| Datasheet | BC414B Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45 5.0 100 350 2.8 1.0 8.0 - 55 to +150 BC414 45 50 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage Emitter Base Voltage Collector Cut Off Current VCBO VEBO ICBO IC=10µA, IE=0 IE=10µA, IC=0 VCB=30V, IE=0 VCB=30V, IE=0, Ta= +125ºC
