Continental Device India BC638
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC638 |
|---|---|
| Datasheet | BC638 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD **PD PD Tj, Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Junction to Ambient Rth (j-c) Rth (j-a) **Rth (j-a) BC635 BC636 45 45 BC637 BC638 60 60 5.0 1.0 800 6.4 1.0 2.75 22 - 55 to +150 BC639 BC640 80 80 45 156 125 UNIT V V V A mW mW/ºC W W mW/ºC ºC ºC/W ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25
