BC638 Datasheet PDF

FEATURES

ᴌComplementary to BC637. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg RATING -60 -60 -5 -500 625 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ L M C BC638 EPITAXIAL PLANAR PNP TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92

ELECTRICAL CHARACTERISTICS

(Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Input Capacitance ICBO V(BR)CEO V(BR)CBO V(BR)EBO hFE VCE(s