| Part number | BC808 |
|---|---|
| Download | BC808 Datasheet (PDF) |
| File Size | 192.65 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
BC808 | PNP Epitaxial Silicon Transistor |
General Semiconductor |
BC808 | Small Signal Transistors |
AUK (Kodenshi AUK Group) |
BC808 | PNP Silicon Transistor |
Infineon |
BC808 | PNP Silicon AF Transistors |
Diotec Semiconductor |
BC808 | Surface mount Si-Epitaxial PlanarTransistors |
VCE = 5 V VCES VCE0 ICM Ptot Tj BC807 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C Storage temperature Junction temperature IC ICM IEM IB IBM Ptot Tstg Tj max. Tj = 150°C Emitter cut off current IC =.
