Continental Device India BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC808 |
|---|---|
| Datasheet | BC808 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max. 1000 250 150 BC808 30 V 25 V mA mW °C fT > 80 MHz Continental Device India Limited Data Sheet Page 1 of 4 BC807 BC808 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) –VCES –IC = 10 mA –VCE0 Emitter–base voltage (open collector) –VEB0 BC807 max. 50 max. 45 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C * Storage temperature Junction temperature –IC –ICM IEM –IB –IBM Ptot Tstg Tj max. max. max. max. max. max. max. 500 1000 1000 100 200 250 –55...
