Description
SYMBOL BC846 Collector Base Voltage VCBO 80 Collector Emitter Voltage (VBE=0V) VCES 80 Collector Emitter Voltage VCEO 65 Emitter Base Voltage VEBO 6 Collector Current (DC) IC Collector Current - Peak ICM Emitter Current - Peak - IEM Base Current - Peak IBM Power Dissipation upto Tamb=25ºC Storage Temperature Ptot* Tstg Junction Temperature Tj BC847 50 BC848 30 50 30 45 30 65 100 200 200 200 250 - 55 to +150 150 Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 BC846, BC847, BC848 SOT-23 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tj=150 ºC Base Emitter on Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on) * VCE(Sat) VBE(Sat)*** hFE IC=2mA, VCE=5V IC=10mA, VCE=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10µA, VCE=5V BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C MIN TYP MAX UNITS 15 nA 5 µA 0.58 0.70 V 0.77 0.25 V 0.60 0.7 V 0.9 90 150 270 Collector Capacitance Transition Frequency Noise Figure IC=2mA, VCE=5V BC846 110 450 BC847/BC848 110 800 BC846A/BC847A/BC848A 110 220 BC846B/BC847B/BC848B 200 450 BC847C/BC848C 420 800 Cc IE=ie=0, VCB=10V, f=1MHz 2.5 pF fT IC=10mA, VCE=5V,f=100MHz 100 NF IC=0.2mA, VCE=5V MHz 10 dB Rs=2kΩ, f=1KHz, B=200Hz *VBE (on) decreases by about 2mV/K with increasing temperature. ***VBE(sat) decreases by about 1.7mV/K with increasing temperature.
