BC847C Overview
VBE(sat) decreases by about 1.7mV/K with increasing temperature.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BC847C |
|---|---|
| Datasheet | BC847C BC846 Datasheet (PDF) |
| File Size | 424.35 KB |
| Manufacturer | Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
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VBE(sat) decreases by about 1.7mV/K with increasing temperature.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BC847C | NPN Transistor | GME |
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BC847C | 100 mA NPN general-purpose transistors | NXP |
| BC847C | NPN General Purpose Amplifier | Fairchild Semiconductor | |
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BC847C | NPN General Purpose Transistor | Rohm |
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BC847C | NPN Silicon AF Transistors | Infineon |
See all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BC847 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC847A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC847B | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC846 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC846A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC846B | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC848 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC848A | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC848B | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC848C | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |