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BC847B Datasheet NPN Silicon Planar Epitaxial Transistors

Manufacturer: CDIL

Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 BC846, BC847,.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number BC847B
Manufacturer CDIL
File Size 424.35 KB
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet BC847B BC846 Datasheet (PDF)

General Description

SYMBOL BC846 Collector Base Voltage VCBO 80 Collector Emitter Voltage (VBE=0V) VCES 80 Collector Emitter Voltage VCEO 65 Emitter Base Voltage VEBO 6 Collector Current (DC) IC Collector Current - Peak ICM Emitter Current - Peak - IEM Base Current - Peak IBM Power Dissipation upto Tamb=25ºC Storage Temperature Ptot* Tstg Junction Temperature Tj BC847 50 BC848 30 50 30 45 30 65 100 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 BC846, BC847, BC848 SOT-23 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=30V, IE=0 VCB=30V, IE=0, Tj=150 ºC Base Emitter on Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VBE(on) * VCE(Sat) VBE(Sat)*** hFE IC=2mA, VCE=5V IC=10mA, VCE=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10µA, VCE=5V BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC847C/BC848C MIN T

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