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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW69 BCW70
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCW69 = H1 BCW70 = H2
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V
Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz
–IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kΩ
–IC = 200 µA; –VCE = 5 V; f = 1 kHz; B = 200 Hz
BCW69
> 120
hFE < –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max.
260
BCW70 215 500
50 V 45 V 200 mA 250 mW 150 ° C
fT typ.
BCW69 Datasheet
