Continental Device India BCW89
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BCW89 |
|---|---|
| Datasheet | BCW89 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain at Tj = 25 °C –IC = 2 mA; —VCE = 5 V Transition frequency at f: 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max. > hFE < 80 V 60 V 200 mA 250 mW 150 ° C 120 260 fT typ. 150 MHz F < 10 dB Continental Device India Limited Data Sheet Page 1 of 4 BCW89 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage
