SYMBOL
BCY58
Collector -Emitter Voltage
VCEO
32
Collector -Emitter Voltage(RBE=10 ohms) VCES
32
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation@ Ta=25 degC
PD
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
PD
Derate Above 25 deg C
Operating And Sto
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BCY58. For precise diagrams, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low N...
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EMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient Rth(j-a) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless
BCY58 Datasheet
