Download the BCY59 datasheet PDF.
This datasheet also covers the BCY58 variant, as both devices belong to the same npn complementary silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.
General Description
SYMBOL
BCY58
Collector -Emitter Voltage
VCEO
32
Collector -Emitter Voltage(RBE=10 ohms) VCES
32
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation@ Ta=25 degC
PD
Derate Above 25 deg C
Power Dissipation@ Tc=25 degC
PD
Derate Above 25 deg C
Operating And Sto
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BCY59. For precise diagrams, and layout, please refer to the original PDF.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low N...
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EMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY58, BCY59 TO-18 Low Noise Audio Amplifier Input Stages & Driver Applications Complementary BCY78/79 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY58 Collector -Emitter Voltage VCEO 32 Collector -Emitter Voltage(RBE=10 ohms) VCES 32 Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25 degC PD Derate Above 25 deg C Power Dissipation@ Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) Junction to Ambient Rth(j-a) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless
BCY59 Datasheet
