Continental Device India BCY79
PNP SILICON PLANAR TRANSISTORS
| Part No. | BCY79 |
|---|---|
| Datasheet | BCY79 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
Complementary BCY57/58/59ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Base Current Power Dissipation @ Ta=25ºC Power Dissipation @ Tc=45ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCES VEBO IC IB PD PD Tj, Tstg BCY77 60 60 5 100 50 BCY78 32 32 5 200 50 0.39 1.00 - 65 to +200 BCY79 45 45 5 200 50 UNIT V V V mA mA W W ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth(j-a) Rth(j-c) 450 K/W 150 K/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 Collector Emitter Voltage VCES IC=10µA, VBE=0 Emitter Bas
