BCY79 Datasheet PDF

MAXIMUM RATINGS

Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Tc = 100°C Derate above 25 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VCEO VCES V£BO ic PD pd Tj- T stg Symbol R0JC R0JA BCY BCY 78 79 32 45 32 45 5 0.2 0.6 2.28 1 6.67 -65 to +200 Max 150 450 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Unit °C/W °c/w BCY78 BCY79 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR PNP SILICON

ELECTRICAL CHARACTERISTICS

(Ta = 25°C unless otherwise noted. Characteristic Type Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ic = 0) Emitter-Base Breakdown Voltage (IE = 2 LiAdc, Ic = 0) Collector Cutoff Current (V C E = 32 V) (VC E = 45 V)