BD170 datasheet by Continental Device India.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BD170 |
|---|---|
| Datasheet | BD170 BD166 Datasheet (PDF) |
| File Size | 71.49 KB |
| Manufacturer | Continental Device India |
| Description | PNP PLASTIC POWER TRANSISTORS |
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BASE 1 2 3 ALL DIMENSIONS IN MM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; current gain IC = 0.15 A; VCE = 2 V VCBO VCEO IC Ptot Tj 166 max.
View all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BD175 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD176 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD177 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD178 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD179 | EPITAXIAL SILICON POWER TRANSISTORS |
| BD139 | NPN EPITAXIAL SILICON POWER TRANSISTORS |
| BD165 | NPN PLASTIC POWER TRANSISTORS |
| BD166 | PNP PLASTIC POWER TRANSISTORS |
| BD167 | NPN PLASTIC POWER TRANSISTORS |
| BD168 | PNP PLASTIC POWER TRANSISTORS |
