Continental Device India BD410
NPN EPITAXIAL SILICON POWER TRANSISTOR
| Part No. | BD410 |
|---|---|
| Datasheet | BD410 Download |
| Manufacturer |  Continental Device India |
| Description | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Collector Current Total Power Dissipation @ Ta=25 ºC @ Tc=25 ºC Storage Temperature Range Lead Temperature 1.6mm from Case for 10 Seconds. SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj, Tstg TL VALUE 500 325 5.0 1.0 1.5 1.25 20 - 55 to +125 260 UNIT V V V A W ºC ºCELECTRICAL CHARACTERISTICS
(Ta=25ºC unless otherwise specified )DESCRIPTION
Collector Cut off Current Collector -Base Voltage Collector Emitter Voltage Emitter Base Voltage DC Current Gain Base Emitter Saturation Voltage Collector Emitter Saturation Voltage SYMBOL ICES VCBO VCEO * VEBO hFE VBE (Sat) VCE (Sat) TEST CONDITION VCE=300V, IB=0 IC=500µA, IE=0 IC=10mA, IB=0 IE=50µA, IC=0 IC=5mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V IC=100mA, IB=10mA IC=100mA, IB=10mA MIN 500 325 5 25 30 20 Dynamic CharacteristicsDESCRIPTION
Output Capacitance Input Capacitance SYMBOL TEST CONDITION MIN Cobo C...
