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SEMICONDUCTORS
BD410 NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC ICM PT tJ ts tL Collector-Base Voltage
Ratings
Value
500
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Unit
V V V A A W
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature range
325 5 1 1.5 Ta =25°C Tc =25°C 1.25 20 -55 to +125 -55 to +125 260
°C
Lead Temperature 1.
BD410 Datasheet
