The BD410 is a NPN Epitaxial Silicon Power Transistor.
| Part Number | BD410 Datasheet |
|---|---|
| Manufacturer | Continental |
| Overview | Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Collector Current Total Power Dissipation @ Ta=25 ºC @ Tc=25 ºC Storage Temperature Range Lead. YP MAX 100 UNIT µA V V V 240 1.5 0.5 V V Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Dynamic Characteristics DESCRIPTION Output Capacitance Input Capacitance *Pulsed Test tp=300µs,Duty Cycle<2% VBE (Sat) VCE (Sat) SYMBOL TEST CONDITION Cobo IE=0, VCB=10V, f=1MHz Cibo IE=. |
| Part Number | BD410 Datasheet |
|---|---|
| Description | NPN EPITAXIAL SILICON POWER TRANSISTOR |
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS BD410 NPN EPITAXILA SILICON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are. Breakdown Voltage (*) Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) Test Condition(s) Min 325 500 5 25 30 20 Typ - Max 100 0.5 1.5 240 - Unit V V V µA V V - IC= 10. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| BD41030HFN-C | ROHM | LIN Transceiver |
| BD41030FJ-C | ROHM | LIN Transceiver |