Datasheet4U Logo Datasheet4U.com

BD410 - NPN Epitaxial Silicon Power Transistor

General Description

Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Collector Current Total Power Dissipation @ Ta=25 ºC @ Tc=25 ºC Storage Temperature Range Lead Temperature 1.6mm from Case for 10 Seconds.

📥 Download Datasheet

Datasheet Details

Part number BD410
Manufacturer Continental
File Size 123.51 KB
Description NPN Epitaxial Silicon Power Transistor
Datasheet download datasheet BD410 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD410 NPN EPITAXIAL SILICON POWER TRANSISTOR Comset Semiconductors
BD41030FJ-C LIN Transceiver ROHM
BD41030HFN-C LIN Transceiver ROHM
BD411 Medium Power Linear and Switching Applications Fairchild Semiconductor
BD4142HFV CMOS Voltage Detector ROHM

Other Datasheets by Continental

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN EPITAXIAL SILICON POWER TRANSISTOR BD410 TO-126 Plastic Package EC B ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak Collector Current Total Power Dissipation @ Ta=25 ºC @ Tc=25 ºC Storage Temperature Range Lead Temperature 1.6mm from Case for 10 Seconds. SYMBOL VCBO VCEO VEBO IC ICM Ptot Tj, Tstg TL VALUE 500 325 5.0 1.0 1.5 1.