Part BF199
Description NPN SILICON PLANAR EPITAXIAL TRANSISTOR
Category Transistor
Manufacturer Continental Device India
Size 97.68 KB
Continental Device India

BF199 Overview

Description

SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 DC Current Gain hFE IC=7mA, VCE=10V Base Emitter On V.