Datasheet Details
| Part number | BF199 |
|---|---|
| Manufacturer | CDIL |
| File Size | 97.68 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Datasheet | BF199-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package CE B RF Transistor ABSOLUTE MAXIMUM.
| Part number | BF199 |
|---|---|
| Manufacturer | CDIL |
| File Size | 97.68 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Datasheet | BF199-CDIL.pdf |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 25 40 4.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 DC Current Gain hFE IC=7mA, VCE=10V Base Emitter On V
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BF199 | NPN RF Transistor | Fairchild Semiconductor |
| Part Number | Description |
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