Continental Device India BF199
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | BF199 |
|---|---|
| Datasheet | BF199 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 25 40 4.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=1mA, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut off Current ICBO VCB=20V, IE = 0 DC Current Gain hFE IC=7mA, VCE=10V Base Emitter On V
