NXP Semiconductors BF199
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 25 mA)● Low voltage (max. 25 V).
APPLICATIONS
● Output stage of a vision IF amplifier.DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage BF199 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
2 3 3 1 2 MAM258 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 7 mA; VCE = 10 V IC = 5 mA; VCE = 10 V; f = 100 MHz open base CONDITIONS open emitter − − − − 38 − MIN. − − − − − 550 TYP. MAX. 40 25 25 500 − − MHz UNIT V V mA mW 1997 Jul 07 2 Philips Semiconductors Product specification NPN medium frequency transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.