Part BF421
Description PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS
Category Transistor
Manufacturer Continental Device India
Size 108.80 KB
Continental Device India

BF421 Overview

Description

SYMBOL 423 421 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 250 300 250 300 5 500 800 6.4 2.75 22 -55 to +150 Rth(j-a) Rth(j-c) 156 45 DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage* VCEO IC=1.0mA,IB=0 Collector Base Voltage VCBO IC=100µ=0 EmitterBase Voltage VEBO IE=100µA, IC=0 Collector-Cut off Current ICBO VCB=200.