Continental Device India BU508AF
NPN POWER TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/WELECTRICAL CHARACTERISTICS
(TC=25ºC unless specified otherwise) . TEST CONDITIONSDESCRIPTION
SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWIT...