BU508AF Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Silicon Diffused Power Transistor GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 4.5 0.7 MAX. 1500 700 8 15 34 1.0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16 kHz ICsat = 4.5 A; f = 16kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the...