NXP Semiconductors BU508DF
Silicon Diffused Power Transistor
| Part No. | BU508DF |
|---|---|
| Datasheet | BU508DF Download |
| Manufacturer |  NXP Semiconductors |
| Description | Silicon Diffused Power Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 34 1.0 2.0 UNIT V V A A W V A V µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.6 A f = 16kHz IF = 4.5 A ICsat = 4.5 A; f = 16kHz PINNING - SOT199 PIN 1 2 3 base collector emitterDESCRIPTION
PIN CONFIGURATION case SYMBOL c b case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Coll...
