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BU508DF Datasheet PDF

Comset BU508DF

The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers.
Part No. BU508DF
Datasheet BU508DF Download
Manufacturer Comset
Description SILICON DIFFUSED POWER TRANSISTORS
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BU508DF datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCESM IC ICM IB ICsat IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Collector Current saturation Base Peak Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 VBE = 0 Value 700 1500 8 15 4 4.5 6 34 150 -65 to +150 Unit V V A A A A A Watts °C °C @ TC = 25° THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-h RthJ-h RthJ-a Ratings Thermal Resistance, Junction to Mounting Base Thermal Resistance, Junction to Hexternal Heatsink Thermal Resistance, Junction to Hexternal Heatsink Thermal Resistance, Junction to Ambient Value 1.0 3.7 2.8 35 Unit K/W K/W K/W K/W ISOLATION Symbol VISOL CISOL Ratings Isolation Voltage from all terminals to external heatsink (peak value) Isolation capacitance from collector to external heatsink Value 1500 Typ. Unit V pF 21 * COMSET SEMICONDUCTORS 1/2

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICES VCE0(...
BU508DF page 2 preview