BU508DF - SILICON DIFFUSED POWER TRANSISTORS

Datasheet Details

Part number	BU508DF
Manufacturer	Comset
File Size	230.63 KB
Description	SILICON DIFFUSED POWER TRANSISTORS
Datasheet	BU508DF Datasheet
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NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCESM IC ICM IB ICsat IBM Pt TJ TStg Ratings Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Collector Peak Current Base Current Collector Current saturation Base Peak Current Total Power Dissipation Junction Temperature Storage Temperature IB = 0 VBE = 0 Value 700 1500 8 15 4 4.

Published: May 11, 2007 |