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BU508DW Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW.

General Description

High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.

QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time CONDITIONS VBE = 0 V TYP.

4.5 1.6 0.7 MAX.

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