| Part Number | BU508DW Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview | High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK RE. ting System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction t. |
BU508DW Datasheet and Specifications PDF
The BU508DW is a Silicon Diffused Power Transistor.
| Part Number | BU508DW Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-247 package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simp. ollector cut-off current Emitter cut-off current DC current gain Diode forward voltage Transition frequency Collector capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IC=4.5A ;IB=1.6A IC=4.5A ;IB=2A VCE=1500V, VBE=0 Tj=125 VEB=5.0V; IC=0 IC=500mA ; VCE=5V IF=4.5A IE=0.1A ; VCE=5V VCB=10V;IE=0;f=1.0MHz 1. |
| Part Number | BU508DW Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for . =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Curren. |