Datasheet Details
| Part number | BU508AFI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 81.54 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Datasheet | BU508AFI_STMicroelectronics.pdf |
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Overview: BU208A ® BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s HIGH VOLTAGE CAPABILITY (> 1500 V) s FULLY INSULATED PACKAGE (U.L.
| Part number | BU508AFI |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 81.54 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Datasheet | BU508AFI_STMicroelectronics.pdf |
|
|
|
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2.
ABSOLUTE MAXIMUM RATINGS Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BU508AFI | NPN Transistor | INCHANGE |
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BU508AFI | SILICON DIFFUSED POWER TRANSISTOR | UTC |
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BU508AFI | SILICON POWER TRANSISTOR | SavantIC |
 |
BU508AF | Silicon Diffused Power Transistor | NXP |
 |
BU508AF | NPN Triple Diffused Planar Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| BU508AF | High voltage NPN Power transistor |
| BU508A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| BU508AW | High voltage NPN Power transistor |
| BU508DFI | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| BU505 | HIGH VOLTAGE NPN MULTIEPITAXIAL FAST-SWITCHING TRANSISTOR |