| Part Number | BU508AFI Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds. 1 2 TO-3 TO. . |
BU508AFI Datasheet and Specifications PDF
The BU508AFI is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS.
| Part Number | BU508AFI Datasheet |
|---|---|
| Description | SILICON DIFFUSED POWER TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview | The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 3. Features *. * TV color horizontal deflection. * With TO-3PML fully isolated package. Absolute Maximum Rating Tc=25°C PARAMETER Collector-base voltage(VBE=0) Collector-emitter voltage(IB=0) Emitter-base Voltage(IC=0) Collector peak current Collector current Collector power dissipation Junction temperature Stora. |
| Part Number | BU508AFI Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use . =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Curre. |
| Part Number | BU508AFI Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P. aining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Collector cut-off current Emitter cut-off current Transition frequency Storage time Fall time CONDITIONS IC=100mA ;IB=0, IE=10mA ;IC=0 IC=4.5A ;IB=2 A IC=4.5A ;IB=2 A IC. |