BU508A-M
BU508A-M is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
- High Power Dissipation-
: PD= 100W@TC= 25℃
APPLICATIONS
- Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector- Emitter Voltage(VBE= 0) 1500
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current- Continuous
5A
ICM Collector Current-Peak
16 A
IB Base Current- Continuous
4A
IBM Base Current-Peak
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
6A 100 W 150 ℃ -65~150 ℃
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Product Specification
BU508A-M isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product...
