BZX79C2V4 - SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

CDIL

General Description

SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1

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BZX79C2V4 silicon glass passivated 0.5watt zener diodes by CDIL - Datasheet Preview

Datasheet Details

Part number	BZX79C2V4
Manufacturer	CDIL
File Size	161.53 KB
Description	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
Datasheet	BZX79C2V4 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BZX79C2V7	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C20	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C22	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C24	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES
BZX79C27	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications when Hermetcally Sealed in Glass with Double Stud This Glass Passivated Chip Provides Excellent Stability & Reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT PD 500 mW Power Dissipation PDS 5.0 W Surge Power Dissipation @ tp=83ms Tj, Tstg -65 to +200 deg C Operating & Storage Junction Temperature Range Rth(j-a) 300 deg C/W Thermal Resistance Junction to Ambient (1) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless otherwise Specified) VF 1.