Datasheet4U Logo Datasheet4U.com

C45C5 - PNP SILICON EPITAXIAL POWER TRANSISTORS

Datasheet Summary

Description

SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 3

📥 Download Datasheet

Datasheet preview – C45C5

Datasheet Details

Part number C45C5
Manufacturer CDIL
File Size 205.61 KB
Description PNP SILICON EPITAXIAL POWER TRANSISTORS
Datasheet download datasheet C45C5 Datasheet
Additional preview pages of the C45C5 datasheet.

📁 Similar Datasheet

  • C45C5 - Power Transistors (RECTRON)
  • C45C11 - Power Transistors (RECTRON)
  • C45C8 - Power Transistors (RECTRON)
  • C45 - SILICON CONTROLLED RECTIFIER (National Electronics)
  • C450 - Phase Control SCR (Powerex)
  • C4500 - OCXO (Vectron International)
  • C4504 - 2SC4504 (Sanyo)
  • C4505 - OCXO (ETC)
  • C4507 - 2SC4507 (SavantIC)
  • C4508 - 2SC4508 (SavantIC)
Other Datasheets by CDIL
  • C45C11 - PNP SILICON EPITAXIAL POWER TRANSISTORS
  • C45C8 - PNP PLASTIC POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL C45C5 C45C11 Collector -Emitter Voltage VCEO 45 80 Collector -Emitter Voltage VCES 55 90 Emitter Base Voltage VEBO 55 Collector Current Continuous IC 44 Peak* ICM 6 6 Base Current IB 2 2 Power Dissipation @ Ta=25 deg C PD 1.67 1.67 Power Dissipation @ Tc=25 deg C 30 30 Operating and Storage Junction Tj, Tstg -55 to +150 55 to +150 Temprature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) 75 75 Junction to Case Rth(j-c) 4.2 4.
Published: |