Continental Device India CD13001
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | CD13001 |
|---|---|
| Datasheet | CD13001 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current Continuous IC Peak (1) ICM Collector Power Dissipation PC Operating and Storage Junction Tj, Tstg Temperature Range (1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10% VALUE 500 400 9.0 0.5 1.5 900 - 55 to +150ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Fall Time Storage Time hFE* Classifications Note: Product is pre selected in DC current gain (Groups A to F). CDIL reserves the right to ship any of the groups according to production availability. MARKING SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO hFE* hFE VCE(sat) TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=500V, IE = 0 VCE=400V, IB = 0 VEB=9V, IC=0 V...
