Continental Device India CD13001
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | CD13001 |
|---|---|
| Datasheet | CD13001 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
SYMBOL VCBO Collector Base Voltage V Collector Emitter Voltage CEO VEBO Emitter Base Voltage IC Collector Current Continuous ICM Peak (1) m o Continental Device India Limited .c U 4 t NPN SILICON PLANAR EPITAXIAL TRANSISTOR e e h S a at .D w w w VALUE 500 400 9.0 0.5 1.5 900 - 55 to +150 IS/ISO 9002 Lic# QSC/L- 000019.2 CD13001 TO - 92 Plastic Package PC Collector Power Dissipation T , Operating and Storage Junction j Tstg Temperature Range (1) Pulse Test: Pulse Width = 5ms, Duty Cycle<10%ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Base Voltage SYMBOL VCBO VCEO VEBO ICBO ICEO IEBO TEST CONDITION IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=500V, IE = 0 VCE=400V, IB = 0 VEB=9V, IC=0 Collector Emitter Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Transition Frequency Fall Time Storage Time m o .c U 4 t e e h S a t a...
