Continental Device India CIL352
NPN SILICON PLANAR TRANSISTORS
| Part No. | CIL352 |
|---|---|
| Datasheet | CIL352 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 70 75 6.0 200 300 1.72 750 4.29 - 65 to +200 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=100µA, IE=0 Collector Base Voltage VEBO IE=100µA, IC=0 Emitter Base Voltage Collector Cut Off Current DC Current Gain ICBO hFE VCB=20V, IE=0 IC=1mA, VCE=10V CIL351 CIL352 IC=10mA, IB=0.5mA IC=100mA, IB=5mA Base Emitter on Voltage DYNAMIC CHARACTERISTICSDESCRIPTION
Transition Frequency VBE (on) IC=10mA, VCE=5V MIN 70 75 6.0 TYP MAX...
