• Part: CIL351
  • Description: NPN SILICON PLANAR TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 162.85 KB
Download CIL351 Datasheet PDF
Continental Device India
CIL351
CIL351 is NPN SILICON PLANAR TRANSISTORS manufactured by Continental Device India.
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 70 75 6.0 200 300 1.72 750 4.29 - 65 to +200 UNIT V V V m A m W m W/ ºC m W m W/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1m A, IB=0 Collector Emitter Voltage VCBO IC=100µA, IE=0 Collector Base Voltage VEBO IE=100µA, IC=0 Emitter Base Voltage Collector Cut Off Current DC Current Gain ICBO h FE VCB=20V, IE=0 IC=1m A, VCE=10V CIL351 CIL352 IC=10m A, IB=0.5m A IC=100m A, IB=5m A Base Emitter on Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency VBE (on) IC=10m A, VCE=5V MIN 70 75 6.0 UNIT V V V 25 100 200 250 480 0.25 0.60 1.0 n A Collector Emitter Saturation Voltage - VCE (sat) SYMBOL f T TEST CONDITION IC=10m A, VCE=5V, f=100MHz TYP 100 UNIT MHz - Pulse Condition: Pulse Width <300µ s, Duty Cycle <2% CIL351_352Rev_1 120504E Continental Device India Limited Data Sheet Page 1 of 3 CIL351/352 TO-18 Metal Can Package TO-18 Metal Can Package 2 K 1 H L J D 3 F PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR Packing Detail PACKAGE Details TO-18 1K/ polybag STANDARD PACK Net Weight/ Qty 350 gm/ 1K pcs Size 3" x 7.5" x 7.5" INNER CARTON BOX Qty 5K Size 17" x 15" x 13.5" OUTER CARTON BOX Qty 80K Gr Wt 34...